| PART |
Description |
Maker |
| TLP1252C6 |
PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
TOSHIBA
|
| TLP1253C6 |
PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
TOSHIBA
|
| TLP813 |
TOSHIBA PHOTOINTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
TOSHIBA[Toshiba Semiconductor]
|
| TLP818 |
PHOTO-INTERRUPTER INFRARED LED PHOTOTRANSISTOR
TOSHIBA PHOTO INTERRUPTER INFRARED LED PHOTOTRANSISTOR
PHOTOINTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
TOSHIBA[Toshiba Semiconductor]
|
| GP1S94 |
Subminiature Wide-gap Type Photointerrupter
Subminiature Wide- Photointerrupter
|
SHARP[Sharp Electrionic Components]
|
| RPI-221 |
Sensors > Photointerrupters > Linear Phototransistor output
Photointerrupter, double-layer mold type
Photointerrupter/ double-layer mold type
|
Rohm CO.,LTD.
|
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| LN59L |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
|
| MTE100 MTE1100 |
GaAs INFRARED EMITTER INFRARED LED FOR PHOTO SENSOR
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
